Inc6006as1
WebINA6006AS1 is a silicon PNP transistor. It is designed with high voltage. FEATURE ・High voltage VCEO = -150V ・Low voltage VCE(sat) = -0.5V(MAX) ・Small capacitance … http://www.datasheet.es/PDF/984097/INA6006AS1-pdf.html
Inc6006as1
Did you know?
WebMar 21, 2024 · Genes around ITGA6-AS1 on UCSC Golden Path with GeneCards custom tracks ( GRCh38/hg38, GRCh37/hg19 ) ITGA6-AS1 in the GeneCaRNA (GeneCards ncRNA compendium) hub on the UCSC Golden Path. Cytogenetic band: 2q31.1 by HGNC. 2q31.1 by Entrez Gene. 2q31.1 by Ensembl. WebINC6006AS1 is a silicon NPN transistor. It is designed with high voltage. FEATURE ・Small package for eas y mounting. ・High voltage V. CEO = 160V ・Low voltage V. CE(sat) = 0.2V(MAX) ・Complementary : INA6006AS1 . APPLICATION . High voltage switching.
WebFOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Datasheet(PDF) - Isahaya Electronics Corporation - INC6006AS1 Datasheet, FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE, Isahaya Electronics Corporation - 2SC5383_10 Datasheet, Isahaya Electronics Corporation - 2SC5814 Datasheet WebFOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO ETHERNET Datasheet(PDF) - List of Unclassifed Manufacturers - 2SC5482 Datasheet, FOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO, Isahaya Electronics Corporation - 2SC5397 Datasheet, Isahaya Electronics …
WebALLPARTS PARTS LIST [I] Korea HQ. : Rm 1707, 1st Block, Ace High Tech City, 3Ga 54-20, Munrae-dong, Yeongdeungpo-gu, Seoul, Korea. ( Tel : 82-2-2634-6328 Fax : 82-2-2634-7328 ) China Office. : Rm 704, A block, Huangdu square, #3008 Yitian road, Futian district, Shenzhen city, Guangdong. province, China ( Tel : 86-755-8321-2156~7 Fax : 86-755 ... WebThe INA851 is the industry's first high-precision instrumentation amplifier with fully differential outputs. This device is optimized to drive inputs of modern high performance analog-to-digital converters (ADCs) with fully differential inputs. The INA851 operates over a very-wide, single-supply or dual-supply range. The
WebINC6006AS1. Type name Availability Status Package Packaging Quantity Minimum Packaging Quantity Packaging Type ROHS Spice parameter; INC6006AS1: Preview: TO …
Webin-c33etldr中文资料下载、封装市场行情1条,in-c33etldr资料使用说明书,inolux库存现货inolux由114ic电子网提供 garage parking assistance matsWebinc6006as1: 151kb / 4p: for low frequency amplify application silicon npn epitaxial type more results. link url ... garage party decor ideasWebHigh voltage VCEO = -150V Low voltage VCE(sat) = -0.5V(MAX) Small capacitance Cob=2.8pF(TYP) Complementary INC6006AS1. APPLICATION. PARAMETER Collector to … black men hair and beard styleshttp://www.idc-com.cn/product/Search/Discreet/en/111/INC6006AS1 black men hair curlyWebMar 21, 2024 · Genes around IL6R-AS1 on UCSC Golden Path with GeneCards custom tracks ( GRCh38/hg38, GRCh37/hg19 ) IL6R-AS1 in the GeneCaRNA (GeneCards ncRNA compendium) hub on the UCSC Golden Path. Cytogenetic band: … black men grey hair fade haircutWebINC6006AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6006AP1 is a silicon NPN transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mounting. High voltage VCEO = 160V CE BLow voltage VCE (sat) = 0.2V (MAX) Complementary garage parts organizerWebFOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE, INC6006AS1 Datasheet, INC6006AS1 circuit, INC6006AS1 data sheet : ISAHAYA, … black men hair care products