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WebPre-Irradiation IRHYS67130CM, 2N7588T3 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance … WebRADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA), IRHYS67230CM Datasheet, IRHYS67230CM circuit, IRHYS67230CM data sheet : IRF, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
WebDownload schematic symbols, PCB footprints, pinout & datasheets for the IRHYS67130CM by Infineon. Increases system efficiency by 2.5%* Reduces MOSFET power loss by 30%* Decreases RDS(on) up to 40% SEE Immunity to LET of 90MeV TID Ratings of 100 and 300Krad (Si) * Compared to previous generation devices proven performance and … WebIRHYS67130CM InfineonElectronic Components purchase,Oneyac Electronics is a leading electronics components distributor and suppliers of China.
Web经销商销售:IRHYS67230CM IR, IRHNJ6S7230, IRHNJ7130。 【IRHYS67230CM IR】Buy Now【IRHNJ6S7230】【IRHNJ7130】【Price】In Stock, Semiconductor, Capacitor, IC, new update 2024【Datasheet】【PDF】 HGCacheDateZOZZOSEO WebText: -257AA) IRHYS67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67130CM 100K , For footnotes refer to the last page www.irf.com 1 06/16/10 IRHYS67130CM, 2N7588T3 , the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHYS67130CM, Resistance (Low Ohmic TO-257) Diode …
WebIRHYS67130CM. Überblick. Rad hard, 100V, 20A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 100 krad(Si) TID, COTS. Features. Single event effect (SEE) hardened; Low RDS(on) Low total gate charge; Fast switching; Simple drive requirements; Hermetically sealed;
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